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SPS01N60C3

SPS01N60C3 Infineon Technologies

SPS01N60C3.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 800MA TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
auf Bestellung 43500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
944+0.52 EUR
Mindestbestellmenge: 944
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Technische Details SPS01N60C3 Infineon Technologies

Description: MOSFET N-CH 650V 800MA TO251-3, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V, Power Dissipation (Max): 11W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: PG-TO251-3-11, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.

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SPS01N60C3 SPS01N60C3 Hersteller : Infineon Technologies Infineon_SPS01N60C3_DS_v02_02_en-1994839.pdf MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3
auf Bestellung 838 Stücke:
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SPS01N60C3 SPS01N60C3.pdf
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SPS01N60C3 SPS01N60C3 Hersteller : Infineon Technologies SPS01N60C3.pdf Description: MOSFET N-CH 650V 800MA TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 11W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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