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SPU02N60C3 infineon


Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883
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Technische Details SPU02N60C3 infineon

Description: SPU02N60 - 600V COOLMOS N-CHANNE, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO-251-3-21, Vgs(th) (Max) @ Id: 3.9V @ 80µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V.

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SPU02N60C3 Infineon Technologies Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883 Description: SPU02N60 - 600V COOLMOS N-CHANNE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-21
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
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SPU02N60C3 SPU02N60C3 Infineon Technologies Infineon_SPD_U02N60C3_DS_v02_06_EN-3167209.pdf MOSFETs N-Ch 600V 1.8A IPAK-3 CoolMOS C3
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SPU02N60C3 Infineon-SPD_U02N60C3-DS-v02_06-EN.pdf?fileId=db3a304412b407950112b42d79214883
Hersteller: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-21
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Produkt ist nicht verfügbar
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SPU02N60C3 Infineon_SPD_U02N60C3_DS_v02_06_EN-3167209.pdf
Hersteller: Infineon Technologies
MOSFETs N-Ch 600V 1.8A IPAK-3 CoolMOS C3
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Im Einkaufswagen  Stück im Wert von  UAH