SPU03N60C3BKMA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 76+ | 0.95 EUR |
| 87+ | 0.83 EUR |
| 91+ | 0.79 EUR |
| 500+ | 0.75 EUR |
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Technische Details SPU03N60C3BKMA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 650V 3.2A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 135µA, Supplier Device Package: PG-TO251-3-21, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote SPU03N60C3BKMA1 nach Preis ab 0.75 EUR bis 1.07 EUR
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SPU03N60C3BKMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Pulsed drain current: 9.6A Power dissipation: 38W Case: TO251 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Gate charge: 2nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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SPU03N60C3BKMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-251 Tube |
Produkt ist nicht verfügbar |
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SPU03N60C3BKMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 3.2A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 135µA Supplier Device Package: PG-TO251-3-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
Produkt ist nicht verfügbar |