Produkte > INFINEON > SPU04N60C3BKMA1

SPU04N60C3BKMA1 Infineon


Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Hersteller: Infineon

auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SPU04N60C3BKMA1 Infineon

Description: MOSFET N-CH 650V 4.5A TO251-3, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 200µA, Supplier Device Package: PG-TO251-3-21, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.

Weitere Produktangebote SPU04N60C3BKMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SPU04N60C3BKMA1 SPU04N60C3BKMA1 Hersteller : Infineon Technologies 5260spd_u04n60c3_rev.2.6.pdffolderiddb3a3043163797a6011637d4bae7003bf.pdf Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPU04N60C3BKMA1 SPU04N60C3BKMA1 Hersteller : Infineon Technologies Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPU04N60C3BKMA1 SPU04N60C3BKMA1 Hersteller : Infineon Technologies Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 MOSFET LOW POWER_LEGACY
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH