SPU30P06P Infineon Technologies

Description: MOSFET P-CH 60V 30A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 4V @ 1.7mA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.