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SPV1001N30

SPV1001N30 STMicroelectronics

dm00031860.pdf Hersteller: STMicroelectronics
Rectifier Diode Schottky 12.5A 8-Pin PQFN T/R
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Technische Details SPV1001N30 STMicroelectronics

Description: DIODE GEN PURP 30V 12.5A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: Standard, Current - Average Rectified (Io): 12.5A, Supplier Device Package: 8-PQFN (5x6), Operating Temperature - Junction: -45°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A, Current - Reverse Leakage @ Vr: 1 µA @ 30 V.

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SPV1001N30 Hersteller : STMicroelectronics SPV1001N.pdf Description: DIODE GEN PURP 30V 12.5A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: Standard
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -45°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
SPV1001N30 Hersteller : STMicroelectronics SPV1001N.pdf Description: DIODE GEN PURP 30V 12.5A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: Standard
Current - Average Rectified (Io): 12.5A
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -45°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
SPV1001N30 SPV1001N30 Hersteller : STMicroelectronics DM00031860-251352.pdf Diodes - General Purpose, Power, Switching Cool bypass switch for photovoltaic app
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