SPV1001N30 STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 30V 12.5A 8PQFN
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -45°C ~ 150°C
Supplier Device Package: 8-PQFN (5x6)
Current - Average Rectified (Io): 12.5A
Technology: Standard
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details SPV1001N30 STMicroelectronics
Description: DIODE GEN PURP 30V 12.5A 8PQFN, Current - Reverse Leakage @ Vr: 1 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: -45°C ~ 150°C, Supplier Device Package: 8-PQFN (5x6), Current - Average Rectified (Io): 12.5A, Technology: Standard, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SPV1001N30
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SPV1001N30 | Hersteller : STMicroelectronics |
Description: DIODE GEN PURP 30V 12.5A 8PQFN Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: -45°C ~ 150°C Supplier Device Package: 8-PQFN (5x6) Current - Average Rectified (Io): 12.5A Technology: Standard Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
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SPV1001N30 | Hersteller : STMicroelectronics |
Diodes - General Purpose, Power, Switching Cool bypass switch for photovoltaic app |
Produkt ist nicht verfügbar |