SPW20N60C3

SPW20N60C3 INFINEON TECHNOLOGIES


SPW20N60C3.pdf Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 57 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.52 EUR
13+ 5.86 EUR
15+ 4.93 EUR
16+ 4.66 EUR
30+ 4.56 EUR
Mindestbestellmenge: 11
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Technische Details SPW20N60C3 INFINEON TECHNOLOGIES

Description: SPW20N60 - 600V COOLMOS N-CHANNE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO247-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.

Weitere Produktangebote SPW20N60C3 nach Preis ab 4.56 EUR bis 15.57 EUR

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SPW20N60C3 SPW20N60C3 Hersteller : INFINEON TECHNOLOGIES SPW20N60C3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.52 EUR
13+ 5.86 EUR
15+ 4.93 EUR
16+ 4.66 EUR
30+ 4.56 EUR
Mindestbestellmenge: 11
SPW20N60C3 SPW20N60C3 Hersteller : Infineon Technologies Infineon_SPW20N60C3_DS_v02_05_en-3360036.pdf MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3
auf Bestellung 1069 Stücke:
Lieferzeit 119-133 Tag (e)
Anzahl Preis ohne MwSt
4+15.57 EUR
10+ 14.69 EUR
25+ 12.35 EUR
100+ 10.4 EUR
240+ 10.37 EUR
480+ 7.57 EUR
Mindestbestellmenge: 4
SPW20N60C3 SPW20N60C3
Produktcode: 30183
Hersteller : Infineon Infineon-SPW20N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42e3702497f Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 650
Idd,A: 20.07.2015
Rds(on), Ohm: 0.19
JHGF: THT
Produkt ist nicht verfügbar
SPW20N60C3 Hersteller : Infineon Technologies Infineon-SPW20N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42e3702497f Description: SPW20N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar