SPW20N60C3 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.11 EUR |
| 13+ | 5.51 EUR |
| 16+ | 4.6 EUR |
| 17+ | 4.35 EUR |
| 30+ | 4.28 EUR |
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Technische Details SPW20N60C3 INFINEON TECHNOLOGIES
Description: SPW20N60 - 600V COOLMOS N-CHANNE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: PG-TO247-3-21, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Weitere Produktangebote SPW20N60C3 nach Preis ab 3.5 EUR bis 8.41 EUR
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SPW20N60C3 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW20N60C3 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 650V 20.7A TO247-3 CoolMOS C3 |
auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
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SPW20N60C3 Produktcode: 30183
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Lieblingsprodukt
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Hersteller : Infineon |
Transistoren > MOSFET N-CH Gehäuse: TO-247 Uds,V: 650 Idd,A: 20.07.2015 Rds(on), Ohm: 0.19 JHGF: THT |
Produkt ist nicht verfügbar
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| SPW20N60C3 | Hersteller : Infineon Technologies |
Description: SPW20N60 - 600V COOLMOS N-CHANNE Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO247-3-21 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar |