Technische Details SPW20N60S5
- MOSFET, N, TO-247
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:600V
- Cont Current Id:20A
- On State Resistance:0.19ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4.5V
- Case Style:TO-247
- Termination Type:Through Hole
- Operating Temperature Range:-55`C to +150`C
- SVHC:Cobalt dichloride
- Cont Current Id @ 25`C:20A
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Max Junction Temperature Tj:150`C
- Max Power Dissipation Ptot:208W
- Max Voltage Vds:650V
- Max Voltage Vgs th:5.5V
- Min Junction Temperature, Tj:-55`C
- No. of Pins:3
- No. of Transistors:1
- Power Dissipation:208W
- Power Dissipation Pd:208W
- Pulse Current Idm:40A
- Voltage Vds:650V
- Transistor Case Style:TO-247
Weitere Produktangebote SPW20N60S5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SPW20N60S5 | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPW20N60S5 | Hersteller : Infineon Technologies |
MOSFETs N-Ch 600V 20A TO247-3 CoolMOS S5 |
Produkt ist nicht verfügbar |
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SPW20N60S5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |