SPW35N60CFD Infineon Technologies
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16 EUR |
| 25+ | 9.1 EUR |
| 100+ | 8.01 EUR |
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Technische Details SPW35N60CFD Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 21.6A, Power dissipation: 313W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.118Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SPW35N60CFD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SPW35N60CFD | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21.6A Power dissipation: 313W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.118Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SPW35N60CFD | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21.6A Power dissipation: 313W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.118Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |