Technische Details SPW35N60CFD Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 21.6A, Power dissipation: 313W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.118Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote SPW35N60CFD
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| SPW35N60CFD | Hersteller : Infineon | Код виробника: SPW35N60CFDFKSA1 Група товару: Транзистори Од. вим: шт |
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SPW35N60CFD | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 21.6A Power dissipation: 313W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.118Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |