SPW35N60CFD Infineon Technologies
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.29 EUR |
| 25+ | 8.98 EUR |
| 100+ | 7.71 EUR |
| 240+ | 7.67 EUR |
| 480+ | 7.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SPW35N60CFD Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 21.6A, Power dissipation: 313W, Case: PG-TO247-3, Gate-source voltage: ±20V, On-state resistance: 0.118Ω, Mounting: THT, Kind of channel: enhancement, Kind of package: tube, Technology: CoolMOS™.
Weitere Produktangebote SPW35N60CFD
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SPW35N60CFD | Hersteller : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21.6A; 313W; PG-TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21.6A Power dissipation: 313W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.118Ω Mounting: THT Kind of channel: enhancement Kind of package: tube Technology: CoolMOS™ |
Produkt ist nicht verfügbar |