SQ1464EEH-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 440MA SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Tc)
Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V
Power Dissipation (Max): 430mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| 15000+ | 0.25 EUR |
| 21000+ | 0.24 EUR |
| 30000+ | 0.23 EUR |
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Technische Details SQ1464EEH-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 440MA SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 440mA (Tc), Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V, Power Dissipation (Max): 430mW (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ1464EEH-T1_GE3 nach Preis ab 0.18 EUR bis 1.25 EUR
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SQ1464EEH-T1_GE3 | Vishay / Siliconix |
MOSFETs 60V Vds; +/-8V Vgs SOT-363/SC-70 |
auf Bestellung 6328 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ1464EEH-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 440MA SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Tc) Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V Power Dissipation (Max): 430mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-70-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 46447 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQ1464EEH-T1_GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 60V Vds; +/-8V Vgs SOT-363/SC-70
MOSFETs 60V Vds; +/-8V Vgs SOT-363/SC-70
auf Bestellung 6328 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.34 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
| SQ1464EEH-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 440MA SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Tc)
Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V
Power Dissipation (Max): 430mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 440MA SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 440mA (Tc)
Rds On (Max) @ Id, Vgs: 1.41Ohm @ 2A, 1.5V
Power Dissipation (Max): 430mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 46447 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |