SQ2325ES-T1_GE3
Produktcode: 164123
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Transistoren P-Kanal-Feld
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote SQ2325ES-T1_GE3 nach Preis ab 0.37 EUR bis 1.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQ2325ES-T1_GE3 | Vishay Semiconductors |
MOSFETs P-Chnl 150-V (D-S) AEC-Q101 Qualified |
auf Bestellung 161808 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SQ2325ES-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 840MA TO236 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 840mA (Tc) Rds On (Max) @ Id, Vgs: 1.77Ohm @ 500mA, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 3079 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQ2325ES-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs P-Chnl 150-V (D-S) AEC-Q101 Qualified
MOSFETs P-Chnl 150-V (D-S) AEC-Q101 Qualified
auf Bestellung 161808 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.12 EUR |
| 10+ | 0.85 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.4 EUR |
| 6000+ | 0.37 EUR |
| SQ2325ES-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 840MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 1.77Ohm @ 500mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET P-CH 150V 840MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Rds On (Max) @ Id, Vgs: 1.77Ohm @ 500mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3079 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |