SQ2337ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.44 EUR |
| 6000+ | 0.41 EUR |
| 9000+ | 0.39 EUR |
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Technische Details SQ2337ES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ2337ES-T1_GE3 nach Preis ab 0.37 EUR bis 1.78 EUR
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SQ2337ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -1.3A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -1.3A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1930 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ2337ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -1.3A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -1.3A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1930 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2337ES-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs P-Channel 80V AEC-Q101 Qualified |
auf Bestellung 196304 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2337ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 80V 2.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 10847 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2337ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2337ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 2.2 A, 0.241 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.241ohm SVHC: To Be Advised |
auf Bestellung 1908 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2337ES-T1_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQ2337ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 2.2 A, 0.241 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.241ohm SVHC: To Be Advised |
auf Bestellung 1908 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2337ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 80V 2.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |