SQ2360EES-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 4.4A TO236, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 6A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V.