SQ2361CEES-T1_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.27 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.33 EUR |
| 6000+ | 0.28 EUR |
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Technische Details SQ2361CEES-T1_GE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQ2361CEES-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SQ2361CEES-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQ2361CEES-T1-GE3 | Vishay | Vishay 60V P-CHANNEL (D-S) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SQ2361CEES-T1/GE3 | Vishay | Vishay |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQ2361CEES-T1_GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQ2361CEES-T1-GE3 |
Hersteller: Vishay
Vishay 60V P-CHANNEL (D-S)
Vishay 60V P-CHANNEL (D-S)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQ2361CEES-T1/GE3 |
Hersteller: Vishay
Vishay
Vishay
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH