SQ2361CES-T1_BE3 Vishay Siliconix

Description: P-CHANNEL 60-V (D-S) 175C MOSFET, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA.