SQ2361CES-T1_GE3 Vishay / Siliconix
auf Bestellung 11172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
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Technische Details SQ2361CES-T1_GE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2361CES-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SQ2361CES-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 2.8A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| SQ2361CES-T1_GE3 | Hersteller : Vishay | Automotive P-Channel 60 V (D-S) 175C MOSFET SOT-23 90M , 177 m @ 10V m @ 7.5V 246 m @ 4.5V |
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SQ2361CES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SQ2361CES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| SQ2361CES-T1/GE3 | Hersteller : Vishay | Vishay |
Produkt ist nicht verfügbar |
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| SQ2361CES-T1-GE3 | Hersteller : Vishay | MOSFETs SOT23 P CHAN 60V |
Produkt ist nicht verfügbar |