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SQ2361ES-T1_BE3

SQ2361ES-T1_BE3 Vishay Siliconix

sq2361es.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.37 EUR
6000+ 0.35 EUR
9000+ 0.33 EUR
30000+ 0.32 EUR
Mindestbestellmenge: 3000
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Technische Details SQ2361ES-T1_BE3 Vishay Siliconix

Description: MOSFET P-CH 60V 2.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQ2361ES-T1_BE3 nach Preis ab 0.36 EUR bis 0.98 EUR

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SQ2361ES-T1_BE3 SQ2361ES-T1_BE3 Hersteller : Vishay Siliconix sq2361es.pdf Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 66542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
21+ 0.85 EUR
100+ 0.59 EUR
500+ 0.49 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 19
SQ2361ES-T1_BE3 SQ2361ES-T1_BE3 Hersteller : Vishay / Siliconix sq2361es.pdf MOSFET P-CHANNEL 60V (D-S)
auf Bestellung 202693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.98 EUR
10+ 0.86 EUR
100+ 0.59 EUR
500+ 0.5 EUR
1000+ 0.42 EUR
3000+ 0.37 EUR
6000+ 0.36 EUR
Mindestbestellmenge: 3
SQ2361ES-T1_BE3 Hersteller : Vishay sq2361es.pdf Transistor P-Channel MOSFET
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