SQ2389ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 40V 4.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.6 EUR |
| 6000+ | 0.57 EUR |
| 9000+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ2389ES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V, Power Dissipation (Max): 3W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ2389ES-T1_GE3 nach Preis ab 0.35 EUR bis 1.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQ2389ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -4.1A On-state resistance: 169mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2958 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
SQ2389ES-T1_GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23 Kind of package: reel; tape Drain-source voltage: -40V Drain current: -4.1A On-state resistance: 169mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -16A Mounting: SMD Case: SOT23 |
auf Bestellung 2958 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
SQ2389ES-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 4.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 20059 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SQ2389ES-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET -40V Vds +/-20V Vgs AEC-Q101 Qualified |
auf Bestellung 451 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
SQ2389ES-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 4.1A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |