SQ2389ES-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3W (Tc)
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Technische Details SQ2389ES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power Dissipation (Max): 3W (Tc).
Weitere Produktangebote SQ2389ES-T1_GE3 nach Preis ab 0.38 EUR bis 1.62 EUR
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SQ2389ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -4.1A Pulsed drain current: -16A Power dissipation: 1W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 169mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ2389ES-T1_GE3 | Vishay / Siliconix |
MOSFETs -40V Vds +/-20V Vgs AEC-Q101 Qualified |
auf Bestellung 24605 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ2389ES-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 4.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 4540 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 169mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 169mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| 136+ | 0.53 EUR |
| 139+ | 0.51 EUR |
| SQ2389ES-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs -40V Vds +/-20V Vgs AEC-Q101 Qualified
MOSFETs -40V Vds +/-20V Vgs AEC-Q101 Qualified
auf Bestellung 24605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1 EUR |
| 10+ | 0.9 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.47 EUR |
| 3000+ | 0.42 EUR |
| 6000+ | 0.38 EUR |
| SQ2389ES-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 4.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 4540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1.01 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |