SQ4153EY-T1_BE3 Vishay Siliconix

Description: MOSFET P-CHANNEL 12V 25A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 7.1W (Tc), Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Grade: Automotive.