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SQ4153EY-T1_GE3

SQ4153EY-T1_GE3 Vishay Siliconix

sq4153ey.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.05 EUR
Mindestbestellmenge: 2500
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Technische Details SQ4153EY-T1_GE3 Vishay Siliconix

Description: MOSFET P-CHANNEL 12V 25A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V, Power Dissipation (Max): 7.1W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V, Qualification: AEC-Q101.

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SQ4153EY-T1_GE3 SQ4153EY-T1_GE3 Hersteller : Vishay Siliconix sq4153ey.pdf Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Qualification: AEC-Q101
auf Bestellung 4680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
10+2.09 EUR
100+1.62 EUR
500+1.38 EUR
1000+1.12 EUR
Mindestbestellmenge: 7
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SQ4153EY-T1_GE3 SQ4153EY-T1_GE3 Hersteller : Vishay / Siliconix sq4153ey.pdf MOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified
auf Bestellung 35602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.85 EUR
10+1.94 EUR
100+1.53 EUR
500+1.27 EUR
1000+1.11 EUR
2500+1.05 EUR
5000+1.03 EUR
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SQ4153EY-T1_GE3 Hersteller : VISHAY sq4153ey.pdf SQ4153EY-T1-GE3 SMD P channel transistors
auf Bestellung 2436 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.45 EUR
45+1.60 EUR
48+1.52 EUR
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SQ4153EY-T1_GE3 SQ4153EY-T1_GE3 Hersteller : Vishay sq4153ey.pdf Trans MOSFET P-CH 12V 25A Automotive AEC-Q101 8-Pin SOIC N T/R
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