SQ4425EY-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CHANNEL 30V 18A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.27 EUR |
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Technische Details SQ4425EY-T1_GE3 Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 18A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V, Power Dissipation (Max): 6.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQ4425EY-T1_GE3 nach Preis ab 1.23 EUR bis 3.66 EUR
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SQ4425EY-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs P-Channel 30V AEC-Q101 Qualified |
auf Bestellung 25360 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4425EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CHANNEL 30V 18A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V Power Dissipation (Max): 6.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 34198 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4425EY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 18A Automotive 8-Pin SOIC N T/R |
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SQ4425EY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 18A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ4425EY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 18A Automotive AEC-Q101 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ4425EY-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQ4425EY-T1_GE3 |
Produkt ist nicht verfügbar |