Produkte > VISHAY SEMICONDUCTORS > SQ4431EY-T1_BE3
SQ4431EY-T1_BE3

SQ4431EY-T1_BE3 Vishay Semiconductors

doc?65527 Hersteller: Vishay Semiconductors
MOSFET P-CHANNEL 30V
auf Bestellung 42315 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.39 EUR
27+ 1.96 EUR
100+ 1.52 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
2500+ 0.99 EUR
5000+ 0.94 EUR
Mindestbestellmenge: 22
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Technische Details SQ4431EY-T1_BE3 Vishay Semiconductors

Description: MOSFET P-CH 30V 10.8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V.

Weitere Produktangebote SQ4431EY-T1_BE3 nach Preis ab 1.07 EUR bis 2.44 EUR

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Preis ohne MwSt
SQ4431EY-T1_BE3 SQ4431EY-T1_BE3 Hersteller : Vishay Siliconix doc?65527 Description: MOSFET P-CH 30V 10.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
auf Bestellung 2493 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.44 EUR
14+ 2 EUR
100+ 1.55 EUR
500+ 1.32 EUR
1000+ 1.07 EUR
Mindestbestellmenge: 11
SQ4431EY-T1_BE3 SQ4431EY-T1_BE3 Hersteller : Vishay Siliconix doc?65527 Description: MOSFET P-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
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