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SQ4435EY-T1_GE3

SQ4435EY-T1_GE3 Vishay Semiconductors

sq4435ey.pdf Hersteller: Vishay Semiconductors
MOSFET P-Channel 30V AEC-Q101 Qualified
auf Bestellung 11405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.25 EUR
10+ 1.87 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 1 EUR
2500+ 0.91 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 2
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Technische Details SQ4435EY-T1_GE3 Vishay Semiconductors

Description: MOSFET P-CHANNEL 30V 15A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V, Power Dissipation (Max): 6.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V.

Weitere Produktangebote SQ4435EY-T1_GE3 nach Preis ab 0.99 EUR bis 2.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQ4435EY-T1_GE3 SQ4435EY-T1_GE3 Hersteller : Vishay Siliconix sq4435ey.pdf Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
auf Bestellung 2317 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.25 EUR
10+ 1.84 EUR
100+ 1.43 EUR
500+ 1.21 EUR
1000+ 0.99 EUR
Mindestbestellmenge: 8
SQ4435EY-T1-GE3 SQ4435EY-T1-GE3 Hersteller : Vishay sq4435ey.pdf Trans MOSFET P-CH 30V 15A Automotive AEC-Q101 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SQ4435EY-T1_GE3 SQ4435EY-T1_GE3 Hersteller : Vishay sq4435ey.pdf Trans MOSFET P-CH 30V 15A Automotive 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SQ4435EY-T1-GE3 Hersteller : Vishay sq4435ey.pdf Trans MOSFET P-CH 30V 15A Automotive 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
SQ4435EY-T1_GE3 SQ4435EY-T1_GE3 Hersteller : Vishay Siliconix sq4435ey.pdf Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Produkt ist nicht verfügbar
SQ4435EY-T1-GE3 SQ4435EY-T1-GE3 Hersteller : Vishay / Siliconix MOSFET RECOMMENDED ALT SQ4435EY-T1_GE3
Produkt ist nicht verfügbar