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SQ4532AEY-T1_BE3

SQ4532AEY-T1_BE3 Vishay Siliconix


sq4532aey.pdf Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.54 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQ4532AEY-T1_BE3 Vishay Siliconix

Description: MOSFET N/P-CH 30V 7.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V, Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQ4532AEY-T1_BE3 nach Preis ab 0.54 EUR bis 2.06 EUR

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SQ4532AEY-T1_BE3 SQ4532AEY-T1_BE3 Hersteller : Vishay Siliconix sq4532aey.pdf Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.29 EUR
100+0.85 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SQ4532AEY-T1_BE3 SQ4532AEY-T1_BE3 Hersteller : Vishay Semiconductors sq4532aey.pdf MOSFETs N/P CHANNEL 30V
auf Bestellung 8183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.06 EUR
10+1.31 EUR
100+0.86 EUR
500+0.8 EUR
2500+0.68 EUR
5000+0.67 EUR
10000+0.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH