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SQ4532AEY-T1_GE3

SQ4532AEY-T1_GE3 Vishay Siliconix

sq4532aey.pdf Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.85 EUR
Mindestbestellmenge: 2500
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Technische Details SQ4532AEY-T1_GE3 Vishay Siliconix

Description: MOSFET N/P-CH 30V 7.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V, Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote SQ4532AEY-T1_GE3 nach Preis ab 0.84 EUR bis 2.03 EUR

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SQ4532AEY-T1_GE3 SQ4532AEY-T1_GE3 Hersteller : Vishay Siliconix sq4532aey.pdf Description: MOSFET N/P-CH 30V 7.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3178 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
15+ 1.79 EUR
25+ 1.7 EUR
100+ 1.4 EUR
250+ 1.31 EUR
500+ 1.16 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
SQ4532AEY-T1_GE3 SQ4532AEY-T1_GE3 Hersteller : Vishay / Siliconix sq4532aey.pdf MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 24873 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.03 EUR
31+ 1.68 EUR
100+ 1.3 EUR
500+ 1.12 EUR
1000+ 0.9 EUR
2500+ 0.86 EUR
5000+ 0.84 EUR
Mindestbestellmenge: 26
SQ4532AEY-T1_GE3 SQ4532AEY-T1_GE3 Hersteller : Vishay sq4532aey.pdf Trans MOSFET N/P-CH 30V 7.3A/5.3A Automotive 8-Pin SOIC N T/R
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