SQ4917EY-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2500+ | 1.24 EUR |
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Technische Details SQ4917EY-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), Power - Max: 5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V, Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ4917EY-T1_GE3 nach Preis ab 1.3 EUR bis 4.17 EUR
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SQ4917EY-T1_GE3 | Vishay / Siliconix |
MOSFET Dual P-Channel 60V AEC-Q101 Qualified |
auf Bestellung 62467 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4917EY-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 60V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) Power - Max: 5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5308 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ4917EY-T1_GE3 |
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Hersteller: Vishay / Siliconix
MOSFET Dual P-Channel 60V AEC-Q101 Qualified
MOSFET Dual P-Channel 60V AEC-Q101 Qualified
auf Bestellung 62467 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.69 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.9 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.33 EUR |
| 2500+ | 1.3 EUR |
| SQ4917EY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5308 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 10+ | 2.69 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.36 EUR |