SQ4920EY-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
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Technische Details SQ4920EY-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC, Drain to Source Voltage (Vdss): 30V, Power - Max: 4.4W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 8A.
Weitere Produktangebote SQ4920EY-T1_GE3 nach Preis ab 1.39 EUR bis 4.76 EUR
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SQ4920EY-T1_GE3 | Vishay Semiconductors |
MOSFETs 30V 8A 4.4W AEC-Q101 Qualified |
auf Bestellung 18809 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4920EY-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOIC Power - Max: 4.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V |
auf Bestellung 5949 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQ4920EY-T1_GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 8A 4.4W AEC-Q101 Qualified
MOSFETs 30V 8A 4.4W AEC-Q101 Qualified
auf Bestellung 18809 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 2.95 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.49 EUR |
| 2500+ | 1.39 EUR |
| SQ4920EY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Power - Max: 4.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Description: MOSFET 2N-CH 30V 8A 8SOIC
Power - Max: 4.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
auf Bestellung 5949 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.76 EUR |
| 10+ | 3.05 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.54 EUR |