SQ4937EY-T1_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 2.87 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.23 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.91 EUR |
| 2500+ | 0.83 EUR |
| 5000+ | 0.8 EUR |
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Technische Details SQ4937EY-T1_GE3 Vishay / Siliconix
Description: MOSFET 2P-CH 30V 5A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SQ4937EY-T1_GE3 nach Preis ab 1.27 EUR bis 2.97 EUR
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SQ4937EY-T1_GE3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 30V 5A 8SOICQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ4937EY-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 5A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.89 EUR |
| 100+ | 1.27 EUR |