SQ4940AEY-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.7 EUR |
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Technische Details SQ4940AEY-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ4940AEY-T1_GE3 nach Preis ab 0.71 EUR bis 2.53 EUR
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SQ4940AEY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R Automotive AEC-Q101 |
auf Bestellung 374 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 5884 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V 8A 4W AEC-Q101 Qualified |
auf Bestellung 6195 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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SQ4940AEY-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.3A Pulsed drain current: 32A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SQ4940AEY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC |
Produkt ist nicht verfügbar |
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SQ4940AEY-T1_GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 5.3A Pulsed drain current: 32A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 29mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |