SQ4949EY-T1_BE3 Vishay
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.96 EUR |
| 5000+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ4949EY-T1_BE3 Vishay
Description: MOSFET 2P-CH 30V 7.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQ4949EY-T1_BE3 nach Preis ab 0.89 EUR bis 3.61 EUR
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SQ4949EY-T1_BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 7.5A Automotive AEC-Q101 8-Pin SOIC N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4949EY-T1_BE3 | Hersteller : Vishay Semiconductors |
MOSFETs DUAL P-CHANNEL 30V |
auf Bestellung 2372 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4949EY-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 7.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2412 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4949EY-T1_BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 7.5A Automotive AEC-Q101 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SQ4949EY-T1_BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 7.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |