SQ4961EY-T1_GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 3.54 EUR |
| 10+ | 2.27 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.13 EUR |
| 2500+ | 1.08 EUR |
| 5000+ | 1.04 EUR |
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Technische Details SQ4961EY-T1_GE3 Vishay / Siliconix
Description: MOSFET 2P-CH 60V 4.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ4961EY-T1_GE3 nach Preis ab 1.17 EUR bis 3.66 EUR
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SQ4961EY-T1_GE3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 60V 4.4A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 1638 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQ4961EY-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2P-CH 60V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1638 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.35 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.17 EUR |