SQ4961EY-T1_GE3 Vishay
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
88+ | 1.71 EUR |
106+ | 1.38 EUR |
250+ | 1.31 EUR |
500+ | 1.09 EUR |
1000+ | 0.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQ4961EY-T1_GE3 Vishay
Description: MOSFET DUAL P-CHAN 60V SO8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SQ4961EY-T1_GE3 nach Preis ab 0.82 EUR bis 4.29 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SQ4961EY-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 4.4A Automotive AEC-Q101 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4961EY-T1_GE3 | Hersteller : Vishay / Siliconix | MOSFET Dual P-Channel 60V AEC-Q101 Qualified |
auf Bestellung 41224 Stücke: Lieferzeit 14-28 Tag (e) |
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SQ4961EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET DUAL P-CHAN 60V SO8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2126 Stücke: Lieferzeit 21-28 Tag (e) |
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SQ4961EY-T1-GE3 | Hersteller : VISHAY | SQ4961EY-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SQ4961EY-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 4.4A Automotive 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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SQ4961EY-T1_GE3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 4.4A Automotive AEC-Q101 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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SQ4961EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET DUAL P-CHAN 60V SO8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |