SQ4961EY-T1_GE3 Vishay
auf Bestellung 910 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 165+ | 0.90 EUR |
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Technische Details SQ4961EY-T1_GE3 Vishay
Description: MOSFET 2P-CH 60V 4.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote SQ4961EY-T1_GE3 nach Preis ab 0.74 EUR bis 3.66 EUR
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SQ4961EY-T1_GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 4.4A Automotive AEC-Q101 8-Pin SO T/R |
auf Bestellung 910 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4961EY-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs Dual P-Channel 60V AEC-Q101 Qualified |
auf Bestellung 36843 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4961EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 60V 4.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 1638 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4961EY-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 4.4A Automotive AEC-Q101 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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| SQ4961EY-T1-GE3 | Hersteller : VISHAY | SQ4961EY-T1-GE3 Multi channel transistors |
Produkt ist nicht verfügbar |
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SQ4961EY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 4.4A Automotive 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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SQ4961EY-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 60V 4.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |