SQA413CEJW-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.37 EUR |
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Technische Details SQA413CEJW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 13.6W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerPAK®SC-70W-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V.
Weitere Produktangebote SQA413CEJW-T1_GE3 nach Preis ab 0.38 EUR bis 1.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SQA413CEJW-T1_GE3 | Hersteller : Vishay Semiconductors | MOSFET |
auf Bestellung 36142 Stücke: Lieferzeit 14-28 Tag (e) |
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SQA413CEJW-T1_GE3 | Hersteller : Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V |
auf Bestellung 3050 Stücke: Lieferzeit 21-28 Tag (e) |
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SQA413CEJW-T1_GE3 | Hersteller : VISHAY | SQA413CEJW-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |