SQD10N30-330H_GE3 Vishay / Siliconix
auf Bestellung 4309 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.40 EUR |
| 1000+ | 1.14 EUR |
| 2000+ | 1.09 EUR |
| 4000+ | 1.04 EUR |
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Technische Details SQD10N30-330H_GE3 Vishay / Siliconix
Description: MOSFET N-CH 300V 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQD10N30-330H_GE3 nach Preis ab 1.13 EUR bis 2.69 EUR
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SQD10N30-330H_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 300V 10A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10N30-330H_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 300V 10A Automotive 3-Pin(2+Tab) TO-252AA |
Produkt ist nicht verfügbar |
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SQD10N30-330H_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 300V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |