SQD10N30-330H_GE3 Vishay / Siliconix
auf Bestellung 14202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.08 EUR |
| 2000+ | 0.98 EUR |
| 4000+ | 0.96 EUR |
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Technische Details SQD10N30-330H_GE3 Vishay / Siliconix
Description: MOSFET N-CH 300V 10A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQD10N30-330H_GE3 nach Preis ab 1.13 EUR bis 2.69 EUR
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SQD10N30-330H_GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 300V 10A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10N30-330H_GE3 | Hersteller : VISHAY |
Description: VISHAY - SQD10N30-330H_GE3 - Leistungs-MOSFET, n-Kanal, 300 V, 10 A, 0.275 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 300V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.8V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.275ohm SVHC: Lead (21-Jan-2025) |
auf Bestellung 1346 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD10N30-330H_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 300V 10A Automotive 3-Pin(2+Tab) TO-252AA |
Produkt ist nicht verfügbar |
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SQD10N30-330H_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 300V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |