SQD19P06-60L_T4GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.03 EUR |
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Technische Details SQD19P06-60L_T4GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQD19P06-60L_T4GE3 nach Preis ab 0.95 EUR bis 3.59 EUR
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SQD19P06-60L_T4GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -60V Vds TO-252 AEC-Q101 Qualified |
auf Bestellung 64946 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD19P06-60L_T4GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 20A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5345 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD19P06-60L_T4GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 20A Automotive AEC-Q101 3-Pin(2+Tab) TO-252AA T/R |
Produkt ist nicht verfügbar |
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| SQD19P06-60L_T4GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252AA T/R |
Produkt ist nicht verfügbar |