SQD50P06-15L_T4GE3 Vishay / Siliconix
auf Bestellung 19153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.31 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.08 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.96 EUR |
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Technische Details SQD50P06-15L_T4GE3 Vishay / Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote SQD50P06-15L_T4GE3 nach Preis ab 1.11 EUR bis 3.33 EUR
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SQD50P06-15L_T4GE3 | Hersteller : Vishay Siliconix |
 Description: P-CHANNEL 60-V (D-S) 175C MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1690 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQD50P06-15L_T4GE3 | Hersteller : Vishay |
Automotive P Channel 60 V D S 175 Degree MOSFET |
Produkt ist nicht verfügbar |
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SQD50P06-15L_T4GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 60-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |