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SQD50P08-25L_GE3

SQD50P08-25L_GE3 Vishay Siliconix

sqd50p08.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
auf Bestellung 17000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+2 EUR
6000+ 1.92 EUR
Mindestbestellmenge: 2000
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Technische Details SQD50P08-25L_GE3 Vishay Siliconix

Description: MOSFET P-CH 80V 50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V.

Weitere Produktangebote SQD50P08-25L_GE3 nach Preis ab 2.1 EUR bis 4.42 EUR

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SQD50P08-25L_GE3 SQD50P08-25L_GE3 Hersteller : Vishay Siliconix sqd50p08.pdf Description: MOSFET P-CH 80V 50A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
auf Bestellung 18062 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.42 EUR
10+ 3.68 EUR
100+ 2.93 EUR
500+ 2.48 EUR
1000+ 2.1 EUR
Mindestbestellmenge: 4
SQD50P08-25L_GE3 SQD50P08-25L_GE3 Hersteller : Vishay / Siliconix VISH_S_A0001223784_1-2567235.pdf MOSFET 80V 50A 136W AEC-Q101 Qualified
auf Bestellung 15906 Stücke:
Lieferzeit 14-28 Tag (e)