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SQD50P08-28_GE3

SQD50P08-28_GE3 Vishay Siliconix

sqd50p08.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 48A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+2.87 EUR
6000+ 2.77 EUR
Mindestbestellmenge: 2000
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Technische Details SQD50P08-28_GE3 Vishay Siliconix

Description: MOSFET P-CH 80V 48A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V, Qualification: AEC-Q101.

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SQD50P08-28_GE3 SQD50P08-28_GE3 Hersteller : Vishay Siliconix sqd50p08.pdf Description: MOSFET P-CH 80V 48A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7004 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.37 EUR
10+ 5.29 EUR
100+ 4.21 EUR
500+ 3.56 EUR
1000+ 3.02 EUR
Mindestbestellmenge: 5
SQD50P08-28_GE3 SQD50P08-28_GE3 Hersteller : Vishay / Siliconix VISH_S_A0001225101_1-2567390.pdf MOSFET P-Channel 80V AEC-Q101 Qualified
auf Bestellung 14881 Stücke:
Lieferzeit 14-28 Tag (e)
SQD50P08-28_GE3 Hersteller : VISHAY sqd50p08.pdf SQD50P08-28-GE3 SMD P channel transistors
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