SQJ126EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 5+ | 4.15 EUR |
| 10+ | 2.67 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.35 EUR |
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Technische Details SQJ126EP-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 500A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJ126EP-T1_GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SQJ126EP-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SQJ126EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8095 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH