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SQJ170ELP-T1_GE3

SQJ170ELP-T1_GE3 Vishay Semiconductors

sqj170elp.pdf Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET
auf Bestellung 10369 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
21+2.51 EUR
26+ 2.05 EUR
100+ 1.6 EUR
500+ 1.54 EUR
3000+ 1.3 EUR
6000+ 1.28 EUR
9000+ 1.26 EUR
Mindestbestellmenge: 21
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Technische Details SQJ170ELP-T1_GE3 Vishay Semiconductors

Description: N-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V.

Weitere Produktangebote SQJ170ELP-T1_GE3 nach Preis ab 1.29 EUR bis 2.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SQJ170ELP-T1_GE3 SQJ170ELP-T1_GE3 Hersteller : Vishay Siliconix sqj170elp.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V
auf Bestellung 4001 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.83 EUR
11+ 2.53 EUR
100+ 1.97 EUR
500+ 1.63 EUR
1000+ 1.29 EUR
Mindestbestellmenge: 10
SQJ170ELP-T1_GE3 Hersteller : VISHAY sqj170elp.pdf SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SQJ170ELP-T1_GE3 SQJ170ELP-T1_GE3 Hersteller : Vishay Siliconix sqj170elp.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V
Produkt ist nicht verfügbar