Produkte > VISHAY SEMICONDUCTORS > SQJ170ELP-T1_GE3
SQJ170ELP-T1_GE3

SQJ170ELP-T1_GE3 Vishay Semiconductors

sqj170elp.pdf Hersteller: Vishay Semiconductors
MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET
auf Bestellung 10289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.70 EUR
10+1.39 EUR
100+1.08 EUR
500+1.04 EUR
3000+0.88 EUR
6000+0.87 EUR
9000+0.85 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SQJ170ELP-T1_GE3 Vishay Semiconductors

Description: N-CHANNEL 60-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V.

Weitere Produktangebote SQJ170ELP-T1_GE3 nach Preis ab 0.87 EUR bis 1.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SQJ170ELP-T1_GE3 SQJ170ELP-T1_GE3 Hersteller : Vishay Siliconix sqj170elp.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V
auf Bestellung 4001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
11+1.71 EUR
100+1.33 EUR
500+1.10 EUR
1000+0.87 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SQJ170ELP-T1_GE3 Hersteller : VISHAY sqj170elp.pdf SQJ170ELP-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ170ELP-T1_GE3 SQJ170ELP-T1_GE3 Hersteller : Vishay Siliconix sqj170elp.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH