SQJ200EP-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 20V 20A/60A PPAK SO, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 20A, 60A, Drain to Source Voltage (Vdss): 20V, Power - Max: 27W, 48W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).