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SQJ204EP-T1_GE3

SQJ204EP-T1_GE3 Vishay Siliconix

sqj204ep.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.42 EUR
6000+ 1.35 EUR
9000+ 1.29 EUR
Mindestbestellmenge: 3000
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Technische Details SQJ204EP-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 12V 20A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), 48W (Tc), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SQJ204EP-T1_GE3 nach Preis ab 1.36 EUR bis 3.46 EUR

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SQJ204EP-T1_GE3 SQJ204EP-T1_GE3 Hersteller : Vishay Siliconix sqj204ep.pdf Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
SQJ204EP-T1_GE3 SQJ204EP-T1_GE3 Hersteller : Vishay / Siliconix sqj204ep.pdf MOSFET 12V Vds -/+12V Vgs PowerPAK SO-8L
auf Bestellung 2920 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.46 EUR
19+ 2.83 EUR
100+ 2.2 EUR
500+ 1.86 EUR
1000+ 1.52 EUR
3000+ 1.43 EUR
6000+ 1.36 EUR
Mindestbestellmenge: 16
SQJ204EP-T1_GE3 SQJ204EP-T1_GE3 Hersteller : Vishay sqj204ep.pdf Trans MOSFET N-CH 12V 20A/60A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
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