SQJ204EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
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Technische Details SQJ204EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Drain to Source Voltage (Vdss): 12V, Power - Max: 27W (Tc), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJ204EP-T1_GE3 nach Preis ab 1.17 EUR bis 3.62 EUR
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SQJ204EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 20A PPAK SO8 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 12V Power - Max: 27W (Tc), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 7840 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJ204EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 7840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.62 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.17 EUR |