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SQJ211ELP-T1_GE3

SQJ211ELP-T1_GE3 Vishay Siliconix

sqj211elp.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 33.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
100+ 1.96 EUR
Mindestbestellmenge: 8
Produktrezensionen
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Technische Details SQJ211ELP-T1_GE3 Vishay Siliconix

Description: MOSFET P-CH 100V 33.6A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V.

Weitere Produktangebote SQJ211ELP-T1_GE3 nach Preis ab 1.46 EUR bis 3.69 EUR

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SQJ211ELP-T1_GE3 SQJ211ELP-T1_GE3 Hersteller : Vishay / Siliconix sqj211elp.pdf MOSFET P-CHANNEL 100-V (D-S) 175C MOSFET
auf Bestellung 52243 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.69 EUR
18+ 3.04 EUR
100+ 2.36 EUR
500+ 2 EUR
1000+ 1.63 EUR
3000+ 1.53 EUR
6000+ 1.46 EUR
Mindestbestellmenge: 15
SQJ211ELP-T1_GE3 SQJ211ELP-T1_GE3 Hersteller : Vishay sqj211elp.pdf Trans MOSFET P-CH 100V 33.6A T/R
Produkt ist nicht verfügbar
SQJ211ELP-T1_GE3 SQJ211ELP-T1_GE3 Hersteller : Vishay Siliconix sqj211elp.pdf Description: MOSFET P-CH 100V 33.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Produkt ist nicht verfügbar