SQJ262EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET 2N-CH 60V 15A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.89 EUR |
| 6000+ | 0.85 EUR |
| 9000+ | 0.81 EUR |
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Technische Details SQJ262EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), 48W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V, Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJ262EP-T1_GE3 nach Preis ab 0.95 EUR bis 2.16 EUR
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SQJ262EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 15A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V, 1260pF @ 25V Rds On (Max) @ Id, Vgs: 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 17690 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ262EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFET Dual 60V Vds Asymtrc AEC-Q101 Qualified |
auf Bestellung 2989 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJ262EP-T1_GE3 | Hersteller : Vishay |
DUAL N-CHANNEL 60-V (D-S) 175C MOSFET |
Produkt ist nicht verfügbar |