SQJ401EP-T1_GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 12V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V
auf Bestellung 2914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 2.85 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SQJ401EP-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 12V 32A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V.
Weitere Produktangebote SQJ401EP-T1_GE3 nach Preis ab 1.42 EUR bis 3.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ401EP-T1_GE3 | Hersteller : Vishay / Siliconix |
MOSFETs P-Channel 12V AEC-Q101 Qualified |
auf Bestellung 38314 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SQJ401EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SQJ401EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 32A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SQJ401EP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 32A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
SQJ401EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 32A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10015 pF @ 6 V |
Produkt ist nicht verfügbar |