SQJ403BEEP-T1_BE3 Vishay / Siliconix
auf Bestellung 25917 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.62 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.47 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.07 EUR |
| 3000+ | 1.04 EUR |
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Technische Details SQJ403BEEP-T1_BE3 Vishay / Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SQJ403BEEP-T1_BE3 nach Preis ab 1.09 EUR bis 2.68 EUR
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SQJ403BEEP-T1_BE3 | Hersteller : Vishay Siliconix |
 Description: P-CHANNEL 30-V (D-S) 175C MOSFETPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2702 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJ403BEEP-T1_BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 30A T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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SQJ403BEEP-T1_BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |