SQJ403BEEP-T1_BE3 Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) 175C MOSFET, Qualification: AEC-Q101, Grade: Automotive, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).