SQJ403EP-T1_GE3 Vishay / Siliconix
auf Bestellung 21754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.12 EUR |
| 10+ | 2.16 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.24 EUR |
| 3000+ | 1.14 EUR |
| 6000+ | 1.13 EUR |
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Produktbewertung abgeben
Technische Details SQJ403EP-T1_GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJ403EP-T1_GE3 nach Preis ab 1.16 EUR bis 3.22 EUR
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SQJ403EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SQJ403EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 30A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJ403EP-T1_GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 30A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 3652 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ403EP-T1_GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 30A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
Produkt ist nicht verfügbar |

