| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.92 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.03 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.93 EUR |
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Technische Details SQJ409EP-T1_BE3 Vishay
Description: P-CHANNEL 40-V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SQJ409EP-T1_BE3 nach Preis ab 1.11 EUR bis 2.53 EUR
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SQJ409EP-T1_BE3 | Vishay Siliconix |
 Description: P-CHANNEL 40-V (D-S) 175C MOSFETInput Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 2690 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SQJ409EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 2690 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.11 EUR |