Weitere Produktangebote SQJ418EP-T1 nach Preis ab 0.9 EUR bis 3.31 EUR
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SQJ418EP-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 48A PPAK SO-8Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ418EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 48A PPAK SO-8 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 5610 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ418EP-T1_GE3 | Vishay / Siliconix |
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified |
auf Bestellung 37928 Stücke: Lieferzeit 10-14 Tag (e) |
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| SQJ418EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 48A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 48A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.9 EUR |
| SQJ418EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 48A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 48A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5610 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 12+ | 1.78 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.95 EUR |
| SQJ418EP-T1_GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
auf Bestellung 37928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.31 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.04 EUR |
| 3000+ | 0.95 EUR |
| 6000+ | 0.92 EUR |