
SQJ443EP-T1_GE3 Vishay
auf Bestellung 2848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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192+ | 0.77 EUR |
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Technische Details SQJ443EP-T1_GE3 Vishay
Description: MOSFET P-CH 40V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TA), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote SQJ443EP-T1_GE3 nach Preis ab 0.61 EUR bis 2.15 EUR
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SQJ443EP-T1_GE3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ443EP-T1_GE3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ443EP-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ443EP-T1_GE3 | Hersteller : Vishay |
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auf Bestellung 2848 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ443EP-T1_GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 59667 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ443EP-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5994 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ443EP-T1_GE3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ443EP-T1-GE3 | Hersteller : Vishay |
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SQJ443EP-T1_GE3 | Hersteller : VISHAY |
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SQJ443EP-T1-GE3 | Hersteller : Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQJ443EP-T1_GE3 |
Produkt ist nicht verfügbar |