SQJ443EP-T1_GE3 Vishay
| Anzahl | Privatkunde |
|---|---|
| 192+ | 0.92 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
192 Stücke
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Produktbewertung abgeben
Technische Details SQJ443EP-T1_GE3 Vishay
Description: VISHAY - SQJ443EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.029 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 40A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.5V, Verlustleistung: 83W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 4Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.029ohm.
Weitere Produktangebote SQJ443EP-T1_GE3 nach Preis ab 0.73 EUR bis 4.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SQJ443EP-T1_GE3 | Vishay |
 Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ443EP-T1_GE3 | Vishay |
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ443EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 40A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ443EP-T1_GE3 | Vishay |
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R |
auf Bestellung 2848 Stücke: Lieferzeit 14-21 Tag (e) |
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SQJ443EP-T1_GE3 | Vishay / Siliconix |
MOSFETs P-Channel 40V AEC-Q101 Qualified |
auf Bestellung 58102 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ443EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 40A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 5994 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ443EP-T1_GE3 | VISHAY |
Description: VISHAY - SQJ443EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.029 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 83W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.029ohm |
auf Bestellung 2885 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SQJ443EP-T1_GE3 |
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Hersteller: Vishay
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.94 EUR |
| SQJ443EP-T1_GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.95 EUR |
| SQJ443EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.06 EUR |
| SQJ443EP-T1_GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
Trans MOSFET P-CH 40V 40A Automotive AEC-Q101 5-Pin(4+Tab) PowerPAK SO T/R
auf Bestellung 2848 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 150+ | 1.18 EUR |
| 160+ | 1.06 EUR |
| 161+ | 1.02 EUR |
| 176+ | 0.89 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.73 EUR |
| SQJ443EP-T1_GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs P-Channel 40V AEC-Q101 Qualified
MOSFETs P-Channel 40V AEC-Q101 Qualified
auf Bestellung 58102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.58 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.12 EUR |
| 3000+ | 1.01 EUR |
| SQJ443EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 11+ | 2.08 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.12 EUR |
| SQJ443EP-T1_GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SQJ443EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.029 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 83W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.029ohm
Description: VISHAY - SQJ443EP-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 40 A, 0.029 ohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 83W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.029ohm
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 4.5 EUR |
| 87+ | 2.67 EUR |
| 130+ | 1.65 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.2 EUR |