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SQJ444EP-T1_GE3

SQJ444EP-T1_GE3 Vishay Siliconix

sqj444ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Package / Case: PowerPAK® SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.85 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SQJ444EP-T1_GE3 Vishay Siliconix

Description: MOSFET N-CH 40V 60A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Package / Case: PowerPAK® SO-8.

Weitere Produktangebote SQJ444EP-T1_GE3 nach Preis ab 0.81 EUR bis 2.06 EUR

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SQJ444EP-T1_GE3 SQJ444EP-T1_GE3 Vishay Semiconductors sqj444ep.pdf MOSFETs N-Ch 40V Vds AEC-Q101 Qualified
auf Bestellung 47713 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.78 EUR
10+1.49 EUR
100+1.19 EUR
500+1.04 EUR
1000+0.89 EUR
3000+0.84 EUR
6000+0.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ444EP-T1_GE3 SQJ444EP-T1_GE3 Vishay Siliconix sqj444ep.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 3878 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
11+1.68 EUR
100+1.31 EUR
500+1.11 EUR
1000+0.9 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ444EP-T1_GE3 Vishay / Siliconix sqj444ep-1019488.pdf MOSFET N-Ch 40V Vds AEC-Q101 Qualified
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJ444EP-T1_GE3 sqj444ep.pdf
SQJ444EP-T1_GE3
Hersteller: Vishay Semiconductors
MOSFETs N-Ch 40V Vds AEC-Q101 Qualified
auf Bestellung 47713 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.78 EUR
10+1.49 EUR
100+1.19 EUR
500+1.04 EUR
1000+0.89 EUR
3000+0.84 EUR
6000+0.81 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ444EP-T1_GE3 sqj444ep.pdf
SQJ444EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Qualification: AEC-Q101
Grade: Automotive
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
auf Bestellung 3878 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.06 EUR
11+1.68 EUR
100+1.31 EUR
500+1.11 EUR
1000+0.9 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SQJ444EP-T1_GE3 sqj444ep-1019488.pdf
Hersteller: Vishay / Siliconix
MOSFET N-Ch 40V Vds AEC-Q101 Qualified
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH